Photoluminescence of InGaN/GaN MQW structures – technological aspects

0469563 - FZÚ 2017 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Zíková, Markéta - Hulicius, Eduard
Photoluminescence of InGaN/GaN MQW structures – technological aspects.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 41-44. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
Grant CEP: GA MŠMT LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: scintillator * GaN * multiple quantum well * photoluminescence * cathodoluminescence * MOVPE
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

In this work results obtained on several types of InGaN/GaN multiple quantum well (MQW) scintillator structures are presented. Luminescence properties of scintillator structures with different number of QWs and different growth rate of QWs were measured. We show that the growth rate and QW number are very important parameters to increase the QW excitonic luminescence. Photoluminescence and cathodoluminescence are compared and discussed.
Trvalý link: http://hdl.handle.net/11104/0267357