Scanning thermal microscopy of Bi2Te3 and Yb0.19Co4Sb12 thermoelectric films

0469519 - ÚFE 2017 RIV DE eng J - Článek v odborném periodiku
Zeipl, R. - Jelínek, M. - Vaniš, Jan - Remsa, J. - Kocourek, T. - Navrátil, J.
Scanning thermal microscopy of Bi2Te3 and Yb0.19Co4Sb12 thermoelectric films.
Applied Physics A - Materials Science & Processing. Roč. 122, č. 4 (2016), č. článku 478. ISSN 0947-8396. E-ISSN 1432-0630
Institucionální podpora: RVO:67985882
Klíčová slova: thermoelectric properties * thin nanolayers * pulsed laser deposition * scanning thermal microscope
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 1.455, rok: 2016

Thermal conductivity of thermoelectric Bi2Te3 and Yb0.19Co4Sb12 thin nanolayers of different thicknesses prepared by pulsed laser deposition on Si (100) substrates was studied by a scanning thermal microscope working in AC current pulse mode. A sensitivity of the approach is demonstrated on the steep Si substrate-layer boundary made by a Ga+ focused ion beam technique. Transport and thermoelectric properties such as in-plane electrical resistivity and the Seebeck coefficient were studied in temperature range from room temperature up to 200 degrees C.
Trvalý link: http://hdl.handle.net/11104/0267308