Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene

0467076 - ÚFCH JH 2017 RIV US eng J - Článek v odborném periodiku
da Costa, Sara - Ek Weis, Johan - Frank, Otakar - Kalbáč, Martin
Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene.
Carbon. Roč. 98, MAR 2016 (2016), s. 592-598. ISSN 0008-6223. E-ISSN 1873-3891
Grant CEP: GA MŠMT LH13022
Institucionální podpora: RVO:61388955
Klíčová slova: Multi-layered graphene * Applied research * Plasma applications
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 6.337, rok: 2016

Correct defect quantification in graphene samples is crucial both for fundamental and applied research. Raman spectroscopy represents the most widely used tool to identify defects in graphene. However, despite its extreme importance the relation between the Raman features and the amount of defects in multilayered graphene samples has not been experimentally verified. In this study we intentionally created defects in single layer graphene, turbostratic bilayer graphene and Bernal stacked bilayer graphene by oxygen plasma. By employing isotopic labelling, our study reveals substantial differences of the effects of plasma treatment on individual layers in bilayer graphene with different stacking orders. In addition Raman spectroscopy evidences scattering of phonons in the bottom layer by defects in the top layer for Bernal-stacked samples, which can in general lead to overestimation of the number of defects by as much as a factor of two. (C) 2015 Elsevier Ltd. All rights reserved.
Trvalý link: http://hdl.handle.net/11104/0265217