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Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process
- 1.0466446 - FZÚ 2017 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Babchenko, O. - Vanko, G. - Dzuba, J. - Ižák, Tibor - Vojs, M. - Lalinský, T. - Kromka, Alexander
Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 157-160. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
Grant CEP: GA ČR(CZ) GP14-16549P
Grant ostatní: AV ČR(CZ) SAV-16-02
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * GaN * HEMT * transistor * metallization
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
The issue of gate metallization stability on AlGaN/GaN heterostructure during the diamond deposition process has been studied. Among tested Ni, Ir, NiO and IrO2 materials the iridium-based has the most promising characteristic to be used. The diamond growth in focused microwave plasma system on transistors with Ir and IrO2 Schottky contact metallization has been demonstrated and discussed.
Trvalý link: http://hdl.handle.net/11104/0264737
Počet záznamů: 1