Diamond coated AlGaN/GaN high electron mobility transistors - effect of deposition process on gate electrode

0464844 - FZÚ 2017 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Vanko, G. - Ižák, Tibor - Babchenko, O. - Kromka, Alexander
Diamond coated AlGaN/GaN high electron mobility transistors - effect of deposition process on gate electrode.
NANOCON 2015 Conference Proceedings. Ostrava: Tanger Ltd., 2015 - (Shrbená, J.; Zbořil, R.), s. 168-173. ISBN 978-80-87294-59-8.
[NANOCON 2015. International Conference /7./. Brno (CZ), 14.10.2015-16.10.2015]
Grant CEP: GA ČR(CZ) GP14-16549P
Institucionální podpora: RVO:68378271
Klíčová slova: GaN HEMT * CVD diamond * iridium oxide * thermal stability * IV characteristics
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

We studied the influence of the diamond deposition on the degradation of Schottky gate electrodes (i.e. Ir or IrO2) and on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). In present study, the diamond films were selectively deposited on the AlGaN/GaN circular HEMT by focused (ellispoidal cavity reactor) and linear antenna (surface wave) microwave plasma at different temperatures from 400°C to 1100°C. The preliminary results on electrical measurements on the diamond-coated c-HEMTs showed degraded electrical properties comparing to c-HEMTs before deposition process, which was attributed to degradation of the Ir gate electrodes even at temperatures as low as 400°C. On the other hand, metal oxide gate electrode layer (IrO2) can withstand diamond CVD process even at high temperatures (~900°C) which make it suitable for fabrication of all-in-diamond c-HEMT devices for high-power applications.
Trvalý link: http://hdl.handle.net/11104/0263605