(100) substrate processing optimization for fabrication of smooth boron doped epitaxial diamond layer by PE CVD

0464790 - FZÚ 2018 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Mortet, Vincent - Fekete, Ladislav - Ashcheulov, Petr - Taylor, Andrew - Hubík, Pavel - Trémouilles, D. - Bedel-Pereira, E.
(100) substrate processing optimization for fabrication of smooth boron doped epitaxial diamond layer by PE CVD.
NANOCON 2014. 6th International conference proceedings. Ostrava: TANGER, 2015, s. 115-119. ISBN 978-80-87294-53-6.
[International Conference NANOCON /6./. Brno (CZ), 05.11.2014-07.11.2014]
Grant CEP: GA ČR GA13-31783S
Institucionální podpora: RVO:68378271
Klíčová slova: doping * PE CVD * diamond * surface treatment * thin film
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Boron doped diamond layers were grown in an SEKI AX5010 microwave plasma enhanced chemical vapour deposition system. Effect of surface preparation, i.e. polishing and O2/H2 plasma etching on epitaxial growth on type Ib (100) HPHT synthetic diamonds were investigated. Using optimized substrate preparation, smooth (RRMS ~ 1 nm) boron doped diamond layers with metallic conduction and free of un-epitaxial crystallites were grown with a relatively high growth rate of 3.7 μm/h. Diamond were characterized by optical microscopy, optical profilometry, atomic force microscopy and Hall effect.
Trvalý link: http://hdl.handle.net/11104/0263568