High performance AlN-based surface acoustic wave sensors on TiN on (100) silicon substrate

0464775 - FZÚ 2017 RIV CA eng C - Konferenční příspěvek (zahraniční konf.)
Soltani, A. - Talbi, A. - Gerbedoen, J.-C. - Bourzgui, N. - Bassam, A. - Mortet, Vincent - Maher, H. - BenMoussa, A.
High performance AlN-based surface acoustic wave sensors on TiN on (100) silicon substrate.
MILLIMETER WAVES. GLOBAL SYMPOSIUM. Montreal: Institute of Electrical and Electronics Engineers ( IEEE ), 2015, s. 1-3, č. článku 7175461. ISBN 9781467371810.
[Global Symposium on Millimeter-Waves (GSMM 2015) /8./. Montreal (CA), 25.05.2015-27.05.2015]
Institucionální podpora: RVO:68378271
Klíčová slova: AlN * TiN * sputtering magnetron * SAW * lamb wave.
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Fabrication of surface acoustic wave sensors (SAW) based on aluminum nitride (AlN) thin film are reported with improved performance using titanium nitride (TiN) nucleation buffer layer as plate electrode on (100) oriented Silicon (Si) substrate. AlN and TiN thin films are deposited at low temperature by magnetron sputtering and characterized by X-ray diffraction, high resolution transmission electron microscopy, showing good crystalline properties. The insertion loss measured on AlN/Si and AlN/TiN/Si based SAW devices shows clearly that the presence of a TiN nucleation layer improves the acoustic wave device performances. As a final result, a SAW device made on a AlN/TiN membrane by backside etched Si substrate generates symmetrical Lamb wave properties with central frequency at 630 MHz and a phase velocity of 10176 m.s-1. Operation in the microwave range is possible with appropriate AlN layers.
Trvalý link: http://hdl.handle.net/11104/0263550