FeS.sub.2./sub. thin films deposition by reactive high power magnetron sputtering in Ar+H.sub.2./sub.S gas mixture

0464298 - FZÚ 2017 RIV DE eng A - Abstrakt
Hubička, Zdeněk - Čada, Martin - Kment, Štěpán - Olejníček, Jiří
FeS₂ thin films deposition by reactive high power magnetron sputtering in Ar+H₂S gas mixture.
International Conference on Plasma Surface Engineering. Abstracts. ( PSE 2016 ) /15./. Braunschweig: European Joint Committee on Plasma and Ion Surface Engineering (EJC / PISE), 2016. s. 137-137.
[International Conference on Plasma Surface Engineering ( PSE 2016 ). 12.09.2016-16.09.2016, Garmisch-Partenkirchen]
Grant CEP: GA TA ČR TA03010743
Institucionální podpora: RVO:68378271
Klíčová slova: sputtering * HIPIMS * films * semiconductor * deposition
Kód oboru RIV: BL - Fyzika plazmatu a výboje v plynech

Polycrystalline and nanocrystalline semiconducting iron pyrite FeS2 is recently an attractive material for optoelectronic and photonic applications. Due to its relatively large optical absorption coefficient in the visible region and narrow band gap of 0.95 ev this material can be suitable for applications in photovoltaics, photodetectors and photoelectrochemistry. Semiconducting polycrystalline and nanocrystalline FeS2 thin films were deposited by high power impulse magnetron reactive sputtering system (R-HIPIMS). The magnetron system with SmCo magnets and a pure circular iron target (diameter 50 mm) was used for the impulse reactive sputtering. The gas mixture of Ar and H2S was used for the reactive sputtering process. The partial pressure of H2S in the deposition plasma reactor was changed in a wide range. The substrate was heated during the deposition by an external furnace and the deposition temperature was controlled in the range 300-600 K.
Trvalý link: http://hdl.handle.net/11104/0268994