The metalorganic vapour phase epitaxy growth of A.sup.III./sup.B.sup.V./sup. heterostructures observed by reflection anisotropy spectroscopy

0463433 - FZÚ 2017 RIV PL eng C - Konferenční příspěvek (zahraniční konf.)
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Hulicius, Eduard - Oswald, Jiří - Komninou, Ph. - Kioseoglou, J.
The metalorganic vapour phase epitaxy growth of A^IIIB^V heterostructures observed by reflection anisotropy spectroscopy.
Acta Physica Polonica A, vol. 129, č. 1A. Warsaw: Polish Academy of Sciences, 2016, A75-A78. ISSN 0587-4246. E-ISSN 1898-794X.
[aszowiec International School and Conference on the Physics of Semiconductors (IS and CPS) /44./. Wisla (PL), 20.06.2015-25.06.2015]
Grant CEP: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: InAs/GaAs quantum dots * cubic semiconductors
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Reflectance anisotropy spectroscopy is a useful technique used for
in situ observation of the metalorganic vapour phase epitaxy growth, because it does not require vacuum in the reaction chamber. With this method we are able to observe the quantum dot growth, the incorporation of indium or antimony atoms in the layer or the monolayer growth of GaAs. We can also estimate the amount of InAs needed for the quantum dot formation, the time necessary for the quantum dot growth or reveal the unintended growth of InAs quantum dots from large dissolved InAs objects.

Trvalý link: http://hdl.handle.net/11104/0262636