GaN quantum dot polarity determination by X-ray photoelectron diffraction

0463238 - FZÚ 2017 RIV NL eng J - Článek v odborném periodiku
Romanyuk, Olexandr - Bartoš, Igor - Brault, J. - De Mierry, P. - Paskova, T. - Jiříček, Petr
GaN quantum dot polarity determination by X-ray photoelectron diffraction.
Applied Surface Science. Roč. 389, Dec (2016), s. 1156-1160. ISSN 0169-4332. E-ISSN 1873-5584
Grant CEP: GA ČR GA15-01687S; GA MŠMT LM2015088
Institucionální podpora: RVO:68378271
Klíčová slova: GaN * semipolar GaN * quantum dots * X-ray photoelectron diffraction * surface polarity
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.387, rok: 2016

Growth of GaN quantum dots (QDs) on polar and semipolar GaN substrates is a promising technology for efficient nitride-based light emitting diodes (LED). The QDs crystal orientation typically repeats the polarity of the substrate. In case of non-polar or semipolar substrates, the polarity of QDs is not obvious. In this article, the polarity of GaN QDs and of underlying layers was investigated nondestructively by X-ray photoelectron diffraction (XPD). It is confirmed experimentally, that the crystalline orientation of polar (0001) GaN QDs follows the orientation of the (0001) sapphire substrate. In case of semipolar GaN QDs grown on source(1-100) sapphire substrate, the (11-22) polarity of QDs was determined.
Trvalý link: http://hdl.handle.net/11104/0262652