The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation

0461487 - FZÚ 2017 RIV DE eng J - Článek v odborném periodiku
Novotný, Michal - Marešová, Eva - Fitl, Přemysl - Vlček, Jan - Bergmann, M. - Vondráček, Martin - Yatskiv, Roman - Bulíř, Jiří - Hubík, Pavel - Hruška, Petr - Drahokoupil, Jan - Abdellaoui, N. - Vrňata, M. - Lančok, Ján
The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation.
Applied Physics A - Materials Science & Processing. Roč. 122, č. 3 (2016), 1-8, č. článku 225. ISSN 0947-8396. E-ISSN 1432-0630
Grant CEP: GA MŠMT(CZ) LG15050; GA ČR(CZ) GAP108/11/0958; GA MŠMT(CZ) LM2011029; GA ČR(CZ) GA14-10279S; GA MŠMT(CZ) 7AMB14FR010
Institucionální podpora: RVO:68378271 ; RVO:67985882
Klíčová slova: samarium-doped zinc oxide zinc/phthalocyanine deposition * evaporation * pulsed laser deposition * thin films
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.455, rok: 2016

Samarium-doped zinc oxide (ZnO:Sm)/zinc phthalocyanine (ZnPc) thin film multilayer structure was prepared by combination of pulsed laser deposition (PLD)and organic molecular evaporation (OME). ZnO:Sm thin film was grown by PLD (Nd:YAG, k = 266 nm, s = 6 ns) from Sm₂O₃:ZnO (1 % Sm) target in oxygen ambient at pressure of 10 and 20 Pa at room temperature on fused silica and Si(100) substrates. ZnPc thin film was deposited on ZnO:Sm layer by OME. ZnO:Sm films of c-axis-oriented hexagonal wurtzite structure and a-form ZnPc were obtained. Emission of intra-4f transition in Sm³⁺ ions and photoluminescence enhancement of near-band-edge emission of ZnO in ZnO:Sm/ZnPc were observed. Electrical properties were not affected by Sm3? dopant as ZnO:Sm film exhibited high electrical resistivity *5 9 10⁴ X cm.

Trvalý link: http://hdl.handle.net/11104/0261784