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Thermoelectric Properties of TI – Doped SnSe: A Hint of Phononic Structure
- 1.0460073 - ÚMCH 2017 RIV US eng J - Článek v odborném periodiku
Kucek, V. - Plecháček, T. - Janíček, P. - Ruleová, P. - Beneš, L. - Navrátil, Jiří - Drašar, Č.
Thermoelectric Properties of TI – Doped SnSe: A Hint of Phononic Structure.
Journal of Electronic Materials. Roč. 45, č. 6 (2016), s. 2943-2949. ISSN 0361-5235. E-ISSN 1543-186X
Grant CEP: GA ČR(CZ) GA16-07711S
Institucionální podpora: RVO:61389013
Klíčová slova: semiconductors * chalcogenides * X-ray diffraction
Kód oboru RIV: CA - Anorganická chemie
Impakt faktor: 1.579, rok: 2016
Polycrystalline samples with composition Sn1-xTlxSe (for x = 0 to 0.04) have been synthesized. Samples were prepared by hot pressing and characterized by measurement of electrical conductivity, Hall coefficient, Seebeck coefficient, and thermal conductivity over the temperature range from 300 K to 725 K.. The influence of Tl substitution on the free carrier concentration and thermoelectric performance was discussed. ZT is 0.6 at 725K.
Trvalý link: http://hdl.handle.net/11104/0260215
Počet záznamů: 1