Polarization anisotropy of the emission from type-II quantum dots

0459032 - FZÚ 2017 RIV US eng J - Článek v odborném periodiku
Klenovský, P. - Hemzal, D. - Steindl, P. - Zíková, Markéta - Křápek, V. - Humlíček, J.
Polarization anisotropy of the emission from type-II quantum dots.
Physical Review. B. Roč. 92, č. 24 (2015), 1-5, č. článku 241302. ISSN 1098-0121
Institucionální podpora: RVO:68378271
Klíčová slova: quantum dot * type II heterostructure * polarization anisotropy * III-V semiconductors
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.736, rok: 2014

We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k·p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wave function and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.
Trvalý link: http://hdl.handle.net/11104/0259302