Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors

0459021 - FZÚ 2017 RIV CH eng J - Článek v odborném periodiku
Krátká, Marie - Babchenko, Oleg - Ukraintsev, Egor - Vachelová, Jana - Davídková, Marie - Vandrovcová, Marta - Kromka, Alexander - Rezek, Bohuslav
Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors.
Diamond and Related Materials. Roč. 63, Mar (2016), 186-191. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA ČR(CZ) GBP108/12/G108
Institucionální podpora: RVO:68378271 ; RVO:61389005 ; RVO:67985823
Klíčová slova: diamond thin films * field effect transistors * proteins * cells * gamma irradiation * atomic force microscope * biosensors
Kód oboru RIV: BO - Biofyzika
Impakt faktor: 2.561, rok: 2016

Diamond is considered as a promising tissue equivalent material in radiation therapies as well as for bioelectronic sensors due to its unique set of properties. These features are combined in this work where effects of gamma irradiation on function and stability of microscopic hydrogen-terminated diamond solution-gated field effect transistors are studied. The H-diamond SG-FETs were prepared using 300 nm thin diamond films deposited on glass by microwave plasma. Prior to gamma irradiation they were interfaced to proteins and cells in cell growth medium. Blank H-diamond SG-FETs did not degrade after the irradiation. With adsorbed proteins and cells they showed specific changes in gate current characteristics after the irradiation. These changes are attributed to modified protein layer and cell morphology on the diamond surface. The presented results establish a first step towards real-time electronicmonitoring of cell growth during the irradiation by therapeutically relevant doses.
Trvalý link: http://hdl.handle.net/11104/0259225