Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

0458379 - FZÚ 2017 RIV NL eng J - Článek v odborném periodiku
Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Zíková, Markéta - Vyskočil, Jan - Hulicius, Eduard
Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures.
Physica B-Condensed Matter. Roč. 480, Jan (2016), 14-22. ISSN 0921-4526. E-ISSN 1873-2135
Grant CEP: GA ČR GA13-15286S; GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: quantum dot * band alignment * InAs/GaAs * GaAsSb * MOVPE * luminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.405, rok: 2016

This review paper summarizes some of results achieved during last years of our quantum dot (QD) research. We show that the QD shape significantly influence the QD photoluminescence (PL) spectrum. Magneto-PL can be used for determination of the anisotropy of QDs. The main goal was to redshift QD PL emission towards telecommunication wavelengths of MOVPE prepared InAs/GaAs QDs using InGaAs or GaAsSb covering strain reducing layer (SRL). We have experimentally demonstrated that the type I/type II transition of GaAsSb covered InAs QD does not depend only on the composition of the SRL, but also on other structure parameters, like QD size or intensity of electric field.
Trvalý link: http://hdl.handle.net/11104/0258645