Formation and Properties of p–i–n Diodes Based on Hydrogenated Amorphous Silicon with Embedded CrSi, MgSi and CaSi Nanocrystallites for Energy Conversion Applications.

0456681 - ÚCHP 2016 RIV JP eng C - Konferenční příspěvek (zahraniční konf.)
Galkin, N.G. - Galkin, K.N. - Chernev, I.M. - Fajgar, Radek - Stuchlíková, The-Ha - Stuchlík, Jiří - Remeš, Zdeněk
Formation and Properties of p–i–n Diodes Based on Hydrogenated Amorphous Silicon with Embedded CrSi, MgSi and CaSi Nanocrystallites for Energy Conversion Applications.
JJAP Conference Proceedings, Volume 3. Tokyo: Japan Society of Applied Physics, 2015, s. 011104. ISBN 978-4-86348-491-7.
[International Conference and Summer School on Advanced Silicide Technology 2014. Tokyo (JP), 19.07.2014-21.07.2014]
Grant CEP: GA ČR(CZ) GA14-05053S; GA MŠMT(CZ) LD14011; GA MŠMT(CZ) LH12236
Institucionální podpora: RVO:67985858 ; RVO:68378271
Klíčová slova: hydrogenated amorphous silicon * chemical vapour deposition * nanoparticles
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie; BM - Fyzika pevných látek a magnetismus (FZU-D)
https://journals.jsap.jp/jjapproceedings/online/3-011104

The hydrogenated amorphous silicon (a-Si:H) based p–i–n diode structures Al/a-Si:H(p+)/a-Si:H(i)/(silicides NPs/a-Si)x/a-Si:H(i)/a-Si:H(n+)/ITO/glass with multiple layers (x = 8,…,15) of the embedded narrow band semiconducting nanoparticle silicide (CrSi2, Mg2Si, and Ca2Si) multistructures have been grown by combining the plasma enhanced chemical vapour deposition (PECVD) and the UHV reactive deposition epitaxy (RDE). Formation of silicide nanoparticles and multistructures has been confirmed in-situ by the Auger electron spectroscopy (AES) and electron energy loss spectroscopies (EELS) and ex-situ by optical absorbance and Raman spectroscopies. The I–V curves of the a-Si:H p–i–n diodes with embedded silicide NP multistructures have shown the maximal forward current for Ca2Si nanoparticles. The room temperature electroluminescence has been observed in the near infrared region for diodes with embedded Ca2Si and Mg2Si NPs multistructures.
Trvalý link: http://hdl.handle.net/11104/0257170