High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

0456582 - FZÚ 2016 RIV NL eng J - Článek v odborném periodiku
Strobel, C. - Leszczynska, B. - Merkel, U. - Kuske, J. - Fischer, D.D. - Albert, M. - Holovský, Jakub - Michard, S.
High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz.
Solar Energy Materials and Solar Cells. Roč. 143, Dec (2015), 347-353. ISSN 0927-0248. E-ISSN 1879-3398
Grant CEP: GA MŠMT 7E12029
GRANT EU: European Commission(XE) 283501 - Fast Track
Institucionální podpora: RVO:68378271
Klíčová slova: VHF * PECVD * microcrystalline silicon * solar cell * high rate * high efficiency
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 4.732, rok: 2015

Microcrystalline silicon thin-film solar cells were fabricated at high absorber layer deposition rates from 1.0 up to 2.5 nm/s. High efficiencies of 9.6% (1.0 nm/s) and 8.6% (2.5 nm/s) were achieved using a very high frequency (VHF) of 140 MHz for the deposition of all silicon layers (p–i–n). Using such a high frequency in the VHF band is unique in the field of thin-film silicon solar cells. The efficiencies obtained especially at very high rates belong to the highest reported efficiencies so far for this technology. This shows that VHF deposition with frequencies larger than 100 MHz is very well suited for a highly productive solar cell fabrication. The VHF power homogeneity problem can be solved by using for example the linear plasma source concept developed at FAP GmbH/TU-Dresden. We show that the efficiency at very high rates of 2.5 nm/s is limited by an increased crack formation in the absorber layer.
Trvalý link: http://hdl.handle.net/11104/0257106