Finite element analysis of AlGaN/GaN micro-diaphragms with diamond coating

0456574 - FZÚ 2016 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Dzuba, J. - Vanko, G. - Vojs, M. - Rýger, I. - Ižák, Tibor - Jirásek, Vít - Kutiš, V. - Lalinský, T.
Finite element analysis of AlGaN/GaN micro-diaphragms with diamond coating.
Smart Sensors, Actuators, and MEMS VII; Cyber-Physical Systems. Bellingham: SPIE, 2015 - (SanchezRojas, J.; Brama, R.), "95171I-1"-"95171I-7". Proceedings of SPIE, 9517. ISBN 978-1-62841-639-8. ISSN 0277-786X.
[Smart Sensors, Actuators, and MEMS VII. 1st SPIE Conference on Cyber-Physical Systems. Barcelona (ES), 04.05.2015-06.05.2015]
Grant CEP: GA ČR(CZ) GP14-16549P
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * GaN * membranes * FEM simulations * thermal buckling
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

We present a pressure sensor based on diamond coated AlGaN/GaN diaphragm with integrated high electron mobility transistor (HEMT). The influence of the diamond film thickness on the properties of the AlGaN/GaN diaphragm is studied by FEM simulation. The effect of thermal buckling as well as the induced piezoelectric charge of HEMTs as a function of pressure and temperature is investigated. It was found out that diamond coated sensor better prevents the effect known as thermal buckling of the diaphragm at elevated temperature. Thermal buckling of diaphragms with 1,5,10 μm diamond coating occurs at temperature 40, 73 and 142°C. Compared with original GaN diaphragm, diamond expanded the operational temperature range of the pressure sensor. Moreover, compared with the operational range of pressure sensor based on pure GaN diaphragm (up to 30 kPa), diamond coated modified MEMS sensors withstand relatively higher pressures (2.2MPa).
Trvalý link: http://hdl.handle.net/11104/0257101