Cz grown 2-in. size Ce:Gd.sub.3./sub.(Al,Ga).sub.5./sub.O.sub.12./sub. single crystal; relationship between Al, Ga site occupancy and scintillation properties

0456552 - FZÚ 2016 RIV NL eng J - Článek v odborném periodiku
Kamada, K. - Kurosawa, S. - Průša, Petr - Nikl, Martin - Kochurikhin, V.V. - Endo, T. - Tsutumi, K. - Sato, H. - Yokota, Y. - Sugiyama, K. - Yoshikawa, A.
Cz grown 2-in. size Ce:Gd₃(Al,Ga)₅O₁₂ single crystal; relationship between Al, Ga site occupancy and scintillation properties.
Optical Materials. Roč. 36, č. 12 (2014), 1942-1945. ISSN 0925-3467. E-ISSN 1873-1252
Institucionální podpora: RVO:68378271
Klíčová slova: scintillator * single crystal growth
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.981, rok: 2014

2-in. size Ce 1%:Gd3(Al1−xGax)5O12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 keV. The dependence of scintillation properties on crystal structure and Al–Ga was discussed.

Trvalý link: http://hdl.handle.net/11104/0257089