Počet záznamů: 1
Characterisation of silicon carbide layers formed during BNCD deposition
- 1.0456477 - FZÚ 2016 GB eng A - Abstrakt
Taylor, Andrew - Ashcheulov, Petr - Čada, Martin - Drahokoupil, Jan - Fekete, Ladislav - Klimša, Ladislav - Olejníček, Jiří - Remeš, Zdeněk - Čtvrtlík, R. - Tomáštík, J. - Janíček, P. - Mistrík, J. - Kopeček, Jaromír - Mortet, Vincent
Characterisation of silicon carbide layers formed during BNCD deposition.
Diamond Conference. Coventry: University of Warwick, 2015. P6.1-P6.3
[De Beers Diamond Conference 2015. 06.07.2015-09.07.2015, Warwick]
Grant CEP: GA ČR GA13-31783S; GA MŠMT LO1409; GA MŠMT(CZ) LM2011029
Grant ostatní: OP VK(XE) CZ.1.07/2.3.00/20.0306
Institucionální podpora: RVO:68378271
Klíčová slova: silicon carbide * nano-crystalline diamond
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
In this work, we further detail properties of silicon carbide (SiC) layers [1] grown by microwave plasma enhanced chemical vapour deposition with linear antenna delivery (MW-LA-PECVD) on silicon substrates using low CO2 concentrations and compare them with nano-crystalline diamond (NCD) layers grown using similar conditions. Structural, mechanical and optical properties of these layers are compared for their potential use as transparent hard coatings for optical IR windows.
Trvalý link: http://hdl.handle.net/11104/0256994
Počet záznamů: 1