0456477 - FZÚ 2016 GB eng A - Abstract
Taylor, Andrew - Ashcheulov, Petr - Čada, Martin - Drahokoupil, Jan - Fekete, Ladislav - Klimša, Ladislav - Olejníček, Jiří - Remeš, Zdeněk - Čtvrtlík, R. - Tomáštík, J. - Janíček, P. - Mistrík, J. - Kopeček, Jaromír - Mortet, Vincent
Characterisation of silicon carbide layers formed during BNCD deposition.
Diamond Conference. Coventry: University of Warwick, 2015. P6.1-P6.3
[De Beers Diamond Conference 2015. 06.07.2015-09.07.2015, Warwick]
R&D Projects: GA ČR GA13-31783S; GA MŠMT LO1409; GA MŠMT(CZ) LM2011029
Grant - others:OP VK(XE) CZ.1.07/2.3.00/20.0306
Institutional support: RVO:68378271
Keywords : silicon carbide * nano-crystalline diamond
Subject RIV: BM - Solid Matter Physics ; Magnetism

In this work, we further detail properties of silicon carbide (SiC) layers [1] grown by microwave plasma enhanced chemical vapour deposition with linear antenna delivery (MW-LA-PECVD) on silicon substrates using low CO2 concentrations and compare them with nano-crystalline diamond (NCD) layers grown using similar conditions. Structural, mechanical and optical properties of these layers are compared for their potential use as transparent hard coatings for optical IR windows.

Permanent Link: http://hdl.handle.net/11104/0256994