Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

0456454 - FZÚ 2016 RIV US eng J - Článek v odborném periodiku
Morales-Masis, M. - de Nicolas, S.M. - Holovský, Jakub - De Wolf, S. - Ballif, C.
Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells.
IEEE Journal of Photovoltaics. Roč. 5, č. 5 (2015), s. 1340-1347. ISSN 2156-3381. E-ISSN 2156-3403
Grant CEP: GA ČR(CZ) GA14-05053S
Institucionální podpora: RVO:68378271
Klíčová slova: solar cells * amorphous * ITO * TCO
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.736, rok: 2015

Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy - as a function of the sputtering oxygen partial pressure.
Trvalý link: http://hdl.handle.net/11104/0256984