Interplay between switching driven by the tunneling current andatomic force of a bistable four-atom Si quantum dot

0456404 - FZÚ 2016 RIV US eng J - Článek v odborném periodiku
Yamazaki, S. - Maeda, K. - Sugimoto, Y. - Abe, M. - Zobač, Vladimír - Pou, P. - Rodrigo, L. - Mutombo, Pingo - Perez, R. - Jelínek, Pavel - Morita, S.
Interplay between switching driven by the tunneling current andatomic force of a bistable four-atom Si quantum dot.
Nano Letters. Roč. 15, č. 7 (2015), 4356-4363. ISSN 1530-6984. E-ISSN 1530-6992
Grant CEP: GA ČR(CZ) GA14-02079S
Institucionální podpora: RVO:68378271
Klíčová slova: atomic manipulation * atomic switch * Si quantum dot * scanning tunneling microscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 13.779, rok: 2015

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices
Trvalý link: http://hdl.handle.net/11104/0256930