Graphene on SiC (0001) inspected by dynamic atomic force microscopy at room temperature

0456224 - FZÚ 2016 RIV DE eng J - Článek v odborném periodiku
Telychko, Mykola - Berger, Jan - Majzik, Zsolt - Jelínek, Pavel - Švec, Martin
Graphene on SiC (0001) inspected by dynamic atomic force microscopy at room temperature.
Beilstein Journal of Nanotechnology. Roč. 6, Apr (2015), s. 901-906. ISSN 2190-4286. E-ISSN 2190-4286
Grant CEP: GA ČR(CZ) GA14-02079S; GA ČR GB14-37427G
Institucionální podpora: RVO:68378271
Klíčová slova: graphene * AFM * STM * DFT * atomic resolution
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.778, rok: 2015

We investigated single-layer graphene on SiC (0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out- of-plane relaxations of carbon atoms.
Trvalý link: http://hdl.handle.net/11104/0256784