AlSb/InAsSb/AlSb deep QWs for the two band high temperature superlinear luminescence

0455387 - FZÚ 2016 CZ eng V - Výzkumná zpráva
Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Mikhailova, M.
AlSb/InAsSb/AlSb deep QWs for the two band high temperature superlinear luminescence.
Praha, 2015
Grant ostatní: COST(XE) MP1204
Institucionální podpora: RVO:68378271
Klíčová slova: quantum wells * luminescence * AlSb/InAsSb/AlSb

InAlAsSb/GaSb based hetero-nanostructures with deep quantum wells grown on GaSb are promising materials for the optoelectronic devices for near- and mid-IR spectral regions. Optical power and quantum efficiency of the LEDs based on the narrow bandgap semiconductor compounds (InGa)(AsSb) are limited by the nonradiative Auger recombination. Earlier we have proposed a method to increase the optical power in the bulk narrow bandgap and later in GaSb-based nanostructures with a deep QW by the effect of impact ionization on the QW with high band offset.
Trvalý link: http://hdl.handle.net/11104/0256048