MOVPE prepared AlSb/InAsSb/AlSb deep quantum well structures used for the two-band superlinear luminescence

0455037 - FZÚ 2016 RIV SE eng C - Konferenční příspěvek (zahraniční konf.)
Mikhailova, M. P. - Ivanov, E.V. - Danilov, L.V. - Petukhov, A.A. - Kalinina, K.V. - Slobozhanyuk, S.I. - Zegrya, G.G. - Stoyanov, N. D. - Yakovlev, Yu. P. - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Zíková, Markéta - Hulicius, Eduard
MOVPE prepared AlSb/InAsSb/AlSb deep quantum well structures used for the two-band superlinear luminescence.
EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund: Nanometer Structure Consortium, 2015 - (Ghalamestani, S.; Lundfald, L.), s. 225-228
[EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund (SE), 07.06.2015-10.06.2015]
Grant CEP: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaSb * superlinear electroluminescence * deep quantum wells
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

AlSb/InAsSb/AlSb samples with three different Sb concentrations in InAsSb QW were prepared by MOVPE. These QW structures with intensive two-band electroluminescence were measured in the photon energy range of 0.5 - 0.8 eV under 20-200 mA drive current at temperatures 77 K and from 22°C up to 180°C. The impact ionization by the electrons heated at AlSb/QW interface was observed. Two-band superlinear electroluminescence with the highest intensity near 375 K occurs. Presented results for the light-emitting diodes with deep InAsSb QW pave the way for mid-IR devices operating in wide temperature range from –200°C up to +200°C.
Trvalý link: http://hdl.handle.net/11104/0255688