Intermediate band solar cell structures grown by MOVPE

0455033 - FZÚ 2016 RIV SE eng C - Konferenční příspěvek (zahraniční konf.)
Vyskočil, Jan - Zíková, Markéta - Hospodková, Alice - Oswald, Jiří - Petříček, Otto - Pangrác, Jiří
Intermediate band solar cell structures grown by MOVPE.
EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund: Nanometer Structure Consortium, 2015 - (Ghalamestani, S.; Lundfald, L.), s. 191-194
[EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund (SE), 07.06.2015-10.06.2015]
Grant CEP: GA ČR(CZ) GP14-21285P
Institucionální podpora: RVO:68378271
Klíčová slova: InAs * GaAsSb * quantum dot * intermediate band solar cells
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Intermediate band solar cell structures were prepared by MOVPE. This type of structure offer a promising way to significantly increase cell efficiency compared to a single-junction solar cells. Efficient photocurrent generation above 1200 nm (below Si band gap) was demonstrated. The promising spectral dependence at this region may be explained by the better carrier separation by a triangular barrier in the valence band suppressing the radiative recombination rate in QDs in this type of structure. In the case of InAs + Ga(As)Sb combined QD samples, a strong decrease of the photocurrent was observed when the number of QD layers in the structure was changed from 1 to 5. This can probably be caused by too complicated structure with multiple combined QD layers, where accumulation of strain and structural defects very probably take place and suppress photocurrent.
Trvalý link: http://hdl.handle.net/11104/0255685