Photoluminescence in an electric field of InAs/GaAs QDs covered by GaAsSb strain reducing layer

0455015 - FZÚ 2016 RIV SE eng C - Konferenční příspěvek (zahraniční konf.)
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Photoluminescence in an electric field of InAs/GaAs QDs covered by GaAsSb strain reducing layer.
EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund: Nanometer Structure Consortium, 2015 - (Ghalamestani, S.; Lundfald, L.), s. 241-244
[EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund (SE), 07.06.2015-10.06.2015]
Grant CEP: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * InAs quantum dot * GaAs * GaAsSb SRL
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

We research the impact of this electric field, its orientation and intensity on QDs with GaAsSb strain reducing layer due to the suitability of this type of structure for application in laser (type I) as well as detector (type II) structures. We focus on the transition between the type I and the type II structure. The type of heterostructure is influenced by the structure composition and may be changed by an electric field. Negative electric field supports the heterostructure to remain type I, positive electric field supports the heterostructure to become type II.
Trvalý link: http://hdl.handle.net/11104/0255675