Semiconducting WO.sub.3./sub. thin films prepared by pulsed reactive magnetron sputtering

0454787 - FZÚ 2016 RIV NL eng J - Článek v odborném periodiku
Brunclíková, M. - Hubička, Zdeněk - Kment, Štěpán - Olejníček, Jiří - Čada, Martin - Kšírová, Petra - Krýsa, J.
Semiconducting WO₃ thin films prepared by pulsed reactive magnetron sputtering.
Research on Chemical Intermediates. Roč. 41, č. 12 (2015), s. 9259-9266. ISSN 0922-6168. E-ISSN 1568-5675.
[Pannonian Symposium on Catalysis /12./. Třešť, 16.09.2014-20.09.2014]
Grant CEP: GA ČR GAP108/12/2104; GA MŠMT LH12043
Grant ostatní: AVČR(CZ) M100101215
Institucionální podpora: RVO:68378271
Klíčová slova: WO₃ * water splitting * HIPIMS * photoanodes
Kód oboru RIV: BL - Fyzika plazmatu a výboje v plynech
Impakt faktor: 1.833, rok: 2015

WO3 crystalline semiconductor thin films for water-splitting applications were prepared by pulsed unbalanced reactive magnetron sputtering with W target and Ar+O2 gas mixture. Postdeposition annealing at temperature of 450°C was applied to the WO3 samples to improve their crystallinity and semiconductor properties. Various pulsing modes were tested in deposition experiments with different pulsing frequencies, discharge power applied in pulse, and average applied power. To determine the influence of the plasma parameters on the deposition process, the pulsed and average ion flux density on the substrate were measured using an ion probe. Different crystallite orientations were found for different modes of discharge pulsing. Preferential orientation of the (200) plane parallel to the substrate surface was identified for higher frequency of discharge pulsing with lower substrate pulsed ion flux but higher average substrate ion flux.
Trvalý link: http://hdl.handle.net/11104/0255434