Influence of gas chemistry on Si-V color centers in diamond films

0454703 - FZÚ 2016 RIV DE eng J - Článek v odborném periodiku
Potocký, Štěpán - Ižák, Tibor - Varga, Marián - Kromka, Alexander
Influence of gas chemistry on Si-V color centers in diamond films.
Physica Status Solidi B. Roč. 252, č. 11 (2015), s. 2580-2584. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA ČR(CZ) GA14-04790S
Institucionální podpora: RVO:68378271
Klíčová slova: chemical vapor deposition * diamond * photoluminescence * plasma * silicon optical centers
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.522, rok: 2015

We studied the influence of process parameters on the incorporation and optical activity of the silicon vacancy (Si-V) zero phonon line (ZPL) in diamond films. The ZPL intensity at 738nm is studied in nano- and micro-crystalline diamond films deposited by MWCVD as a function of a substrate temperature, gas composition, i.e. CO2 and N2 concentrations in the gas mixture. We found that the ZPL intensity of Si-V center is independent in a broad deposition temperature range from 450°C to 1100°C with a full width of half maxima (FWHM) of 6 nm. For the lowest deposition temperature (350°C), the ZPL intensity decreases and the FWHM doubles. The Si-V center ZPL vanished for admixtures of 1% CO2 or 2.5% of N2 and higher in the gas mixture. For smaller concentrations, the ZPL intensity gradually decreased while keeping the ZPL peak position and FWHM constant. The influence of CO2 and N2 addition on the diamond morphology is also discussed with respect to the presence of Si-V centers.
Trvalý link: http://hdl.handle.net/11104/0255340