Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

0454645 - FZÚ 2016 RIV SK eng J - Článek v odborném periodiku
Marton, M. - Mikolášek, M. - Bruncko, J. - Novotný, I. - Ižák, Tibor - Vojs, M. - Kozak, Halyna - Varga, Marián - Artemenko, Anna - Kromka, Alexander
Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction.
Journal of Electrical Engineering - Elektrotechnický časopis. Roč. 66, č. 5 (2015), s. 277-281. ISSN 1335-3632. E-ISSN 1339-309X
Grant CEP: GA ČR(CZ) GBP108/12/G108; GA MŠMT(CZ) 7AMB14SK024
Institucionální podpora: RVO:68378271
Klíčová slova: boron doped diamond * zinc oxide * Raman spectroscopy * bipolar heterostructure * wide-bandgap
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.407, rok: 2015

In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed.
Trvalý link: http://hdl.handle.net/11104/0255311