Nanoparticles embedded in hydrogenated amorphous silicon thin layers

0452934 - FZÚ 2016 DE eng A - Abstrakt
Remeš, Zdeněk - Stuchlík, Jiří - Stuchlíková, The-Ha - Purkrt, Adam - Fajgar, Radek - Dřínek, Vladislav - Zhuravlev, K. - Galkin, N.G.
Nanoparticles embedded in hydrogenated amorphous silicon thin layers.
International Conference on Amorphous and Nanocrystalline Semiconductors /26./ (ICANS26). Abstracts and Program. Aachen: ICANS26, 2015 - (Carius, R.). s. 196-197
[International Conference on Amorphous and Nanocrystalline Semiconductors /26./ (ICANS26). 13.09.2015-18.09.2015, Aachen]
Grant CEP: GA ČR(CZ) GA14-05053S; GA MŠMT(CZ) LD14011; GA MŠMT LH12236
Institucionální podpora: RVO:68378271 ; RVO:67985858
Klíčová slova: a-Si:H * LED * RLA * RDE
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Nanoparticles (NPs) embedded in the hydrogenated amorphous silicon (a-Si:H) thin layer modify its optoelectronic properties making this new nanocomposite material suitable for low cost, large area applications such as light emitting diodes (LED). The a-Si:H layer was grown on glass substrates at 250°C at the Institute of Physics in Prague by the radio frequency plasma enhanced chemical vapor deposition (CVD). The deposition of PbS and CdS nanoparticles on a-Si:H surface was achieved ex-situ at the Rzhanov Institute of Semiconductor Physics in Novosibirsk using Langmuir-Blodgett technique. The Reactive Deposition Epitaxy (RDE) in the ultra high vacuum (UHV) chamber was used ex-situ at Institute of Automation and Control Processes in Vladivostok to deposit metal (Mg, Ca, Cr) silicide nanoparticles.
Trvalý link: http://hdl.handle.net/11104/0253827