In situ XPS characterization of diamond films after AR.sup.+./sup. cluster ion beam sputtering

0452710 - FZÚ 2016 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Artemenko, Anna - Babchenko, Oleg - Kozak, Halyna - Ukraintsev, Egor - Ižák, Tibor - Romanyuk, Olexandr - Potocký, Štěpán - Kromka, Alexander
In situ XPS characterization of diamond films after AR⁺ cluster ion beam sputtering.
NANOCON 2015: 7th International Conference on Nanomaterials - Research and Application, Conference Proceedings. Ostrava: TANGER, spol. s r.o., 2015, s. 605-610. ISBN 978-80-87294-63-5.
[NANOCON 2015. International Conference /7./. Brno (CZ), 14.10.2015-16.10.2015]
Grant CEP: GA ČR GA15-01687S
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * depth profiling * XPS * sputtering * Raman
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

In this work, in situ XPS analysis of chemical composition of H- and O-terminated nano- and microcrystalline diamond (NCD and MCD) films before and after their sputtering by the Ar+ cluster ion beam was investigated. Scanning electron microscopy confirmed sputtering of all diamond surfaces with a rate about 0.5 nm/min. Raman spectroscopy and XPS revealed surface graphitization of diamond surface induced by sputtering. Moreover, XPS data showed the presence of about 0.7 % of Ar atoms on the investigated diamond surface after 66 min of sputtering. Also, oxygen residuals were still presented on the H-NCD surface after 66 min of sputtering. In contrast, no oxygen was found on the H-MCD surface just after 2 min of sputtering. Surface composition is discussed in respect to the diamond films growth parameters and surface structure.
Trvalý link: http://hdl.handle.net/11104/0253621