Cathodoluminescence study of LuAG:CeGdGa single crystalline films

0451548 - ÚPT 2016 ME eng A - Abstrakt
Lalinský, Ondřej - Schauer, Petr - Kučera, M. - Onderišinová, Z. - Hanuš, M.
Cathodoluminescence study of LuAG:CeGdGa single crystalline films.
ICOM 2015. The 4TH International Conference on the Physics of Optical Materials and Devices. Book of Abstracts. Beograd: Institut za nuklearne nauke, 2015. s. 125. ISBN 978-86-7306-134-4.
[ICOM 2015. The 4TH International Conference on the Physics of Optical Materials and Devices. 31.08.2015-04.09.2015, Budva]
Institucionální podpora: RVO:68081731
Klíčová slova: multicomponent garnets * LuAG:CeGdGa * cathodoluminescence * temperature dependance * scintillator * SEM detector
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

It is known that the LuAG:Ce single crystals usually contain various unwanted structural defects (mainly antisite defects) which can result in nonradiative recombination and in delayed luminescence decay (afterglow). The concentration of these defects decreases with the decreasing temperature of the crystal growth. Therefore, single crystalline epitaxial films have attracted an attention because the growth temperature of LuAG:Ce films is about a half (1000 degrees celsius) of the bulk ones (2000 degrees Celsius). Although some new defects can be created due to strain in the film, the concentration of the antisite defects is highly reduced, as shown in this work. Moreover, the influence of Gd and Ga substitution on the cathodoluminescence (CL) properties was studied.
Trvalý link: http://hdl.handle.net/11104/0252700