Voltage-controlled ferroelastic switching in Pb(Zr.sub.0.2./sub.Ti.sub.0.8./sub.)O.sub.3./sub. thin films

0451366 - FZÚ 2016 RIV US eng J - Článek v odborném periodiku
Khan, A.I. - Martí, Xavier - Serrao, C. - Ramesh, R. - Salahuddin, S.
Voltage-controlled ferroelastic switching in Pb(Zr_0.2Ti_0.8)O₃ thin films.
Nano Letters. Roč. 15, č. 4 (2015), s. 2229-2234. ISSN 1530-6984. E-ISSN 1530-6992
Institucionální podpora: RVO:68378271
Klíčová slova: nanodomains * ferroelastic switching * ferroelectricity * Pb(Zr_0.2Ti_0.8)O₃ * thin film
Kód oboru RIV: BE - Teoretická fyzika
Impakt faktor: 13.779, rok: 2015

We report a voltage controlled reversible creation and annihilation of a-axis oriented 10 nm wide ferroelastic nanodomains without a concurrent ferroelectric 180° switching of the surrounding c-domain matrix in archetypal ferroelectric Pb(Zr0.2Ti0.8)O3 thin films by using the piezo-response force microscopy technique. In previous studies, the coupled nature of ferroelectric switching and ferroelastic rotation has made it difficult to differentiate the underlying physics of ferroelastic domain wall movement. Our observation of distinct thresholds for ferroelectric and ferroelastic switching allows us investigate the ferroelastic switching cleanly and demonstrate a new degree of nanoscale control over the ferroelastic domains.
Trvalý link: http://hdl.handle.net/11104/0252536