The metalorganic vapour phase epitaxy growth of A.sup.III./sup. B.sup.V./sup. heterostructures observed by reflection anisotropy spectroscopy

0450973 - FZÚ 2016 PL eng A - Abstrakt
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Hulicius, Eduard - Oswald, Jiří - Komninou, Ph. - Kioseoglou, J.
The metalorganic vapour phase epitaxy growth of A^III B^V heterostructures observed by reflection anisotropy spectroscopy.
"Jaszowiec" International School and Conference on the Physics of Semiconductors /44./. Warsaw: Polish Academy of Sciences, 2015. s. 13-13.
["Jaszowiec" International School and Conference on the Physics of Semiconductors /44./. 20.06.2015-25.06.2015, Wisla]
Grant CEP: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * reflectance anisotropy spectroscopy * GaAs
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Reflectance anisotropy spectroscopy is a useful technique used for in-situ observation of the MOVPE growth, because it does not require vacuum in the reaction chamber. With this method we are able to observe the quantum dot (QD) growth, the incorporation of indium or antimony atoms in the layer or the monolayer growth of GaAs. We could also estimate the amount of InAs needed for the QD formation, the time necessary for the QD growth or reveal the unintended growth of InAs QDs from large dissolved InAs objects.
Trvalý link: http://hdl.handle.net/11104/0252147