Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy

0450842 - FZÚ 2016 RIV CZ eng J - Článek v odborném periodiku
Chobola, Z. - Luňák, M. - Vaněk, J. - Hulicius, Eduard - Kusák, I.
Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy.
Journal of Electrical Engineering. Roč. 66, č. 4 (2015), s. 226-230. ISSN 0013-578X
Institucionální podpora: RVO:68378271
Klíčová slova: silicon solar-cells * electrical noise * tool
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.
Trvalý link: http://hdl.handle.net/11104/0252049