Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

0450824 - ÚSMH 2016 RIV NL eng J - Článek v odborném periodiku
Kostka, Petr - Zavadil, Jiří - Iovu, M.S. - Ivanova, Z. G. - Furniss, D. - Seddon, A.B.
Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions.
Journal of Alloys and Compounds. Roč. 648, NOV 5 (2015), s. 237-243. ISSN 0925-8388. E-ISSN 1873-4669
Grant CEP: GA ČR GAP106/12/2384
Institucionální podpora: RVO:67985891 ; RVO:67985882
Klíčová slova: chalcogenide glasses * rare earth ions * low-temperature photoluminescence * optical transmission
Kód oboru RIV: JH - Keramika, žáruvzdorné materiály a skla
Impakt faktor: 3.014, rok: 2015

Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE3+) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE3+ ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE3+ ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE3+ dopants.
Trvalý link: http://hdl.handle.net/11104/0252036