Utilisation of Spark Plasma Sintering for joining of advanced SiC-based ceramics for aerospace applications

0450463 - ÚFM 2016 RIV ES eng A - Abstrakt
Tatarko, P. - Saunders, T. - Chlup, Zdeněk - Dlouhý, Ivo - Reece, M. J.
Utilisation of Spark Plasma Sintering for joining of advanced SiC-based ceramics for aerospace applications.
14th International Conference European Ceramics Society. Toledo: ECERS, 2015. ISBN 978-84-606-9257-7.
[ECERS 14 - International Conference of the European Ceramic Society /14./. 21.06.2015-25.06.2015, Toledo]
Institucionální podpora: RVO:68081723
Klíčová slova: Spark Plasma Sintering * joining * SiC-based ceramics
Kód oboru RIV: JL - Únava materiálu a lomová mechanika

ilicon carbide (SiC) based materials are considered as the ideal choice for several applications in extreme environments due to their unique combinatio n of high - temperature mechanical properties and good corrosion resistance. Moreover, SiC - based ceramic composites, such as SiC/SiC or C/SiC, are the primary candidates for the components for aerospace and for industrial applications performing at extreme c onditions. A critical issue for the wider use of these materials is the development of inexpensive and reliable joining methods to assemble large components into complex structures. Spark Plasma Sintering (SPS) was employed to join monolithic β - SiC, prepa red by chemical vapour deposition (CVD), with titanium, titanium aluminium vanadium TiAl 6 V 4 and highly pure titanium silicon carbide Ti 3 SiC 2 as the intermediate joining materials. Moreover, a direct joining without any intermediate joining material was als o performed. The monolithic CVD SiC was used in order to optimize the parameters of the joining process that was then applied for ceramic matrix composites (CMC), particularly carbon reinforced silicon carbide (C/SiC) composites. These composites are alway s coated with a thin layer of CVD SiC in order to assure their oxidation protection. Therefore, the joining process parameters could be optimized using bulk CVD β - SiC as the same interface as for CMC is being joined. Titanium - based alloys were selected as intermediate joining materials due to their excellent wettability on SiC substrates.
Trvalý link: http://hdl.handle.net/11104/0252338