Počet záznamů: 1
On the technological aspects of doped ZnO. Diamond heterojunction preparation and analysis
- 1.0449863 - FZÚ 2016 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Marton, M. - Mikolášek, M. - Bruncko, J. - Novotný, I. - Ižák, Tibor - Kováčová, S. - Vojs, M.
On the technological aspects of doped ZnO. Diamond heterojunction preparation and analysis.
Nanosvet s vákuom. Nanoworld with vacuum. Bratislava: Slovenská vákuová spoločnosť, 2015 - (Michalka, M.; Vincze, A.; Veselý, M.), s. 20-24. ISBN 978-80-971179-6-2.
[Škola vákuovej techniky /18./. Štrbské Pleso (SK), 07.10.2015-11.10.2015]
Grant CEP: GA ČR(CZ) GBP108/12/G108; GA MŠMT(CZ) 7AMB14SK024
Institucionální podpora: RVO:68378271
Klíčová slova: ZnO * diamond * heterojunction * electrical properties
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
HFCVD and sputtering deposition techniques were used for preparation of rectifying p-n junction from ZnO (n) and BDD (p) layers. The properties of individual layers were optimized in order to obtain low doping level allowing the junction to operate as a diode. Adhesion and other properties of the diamond layers were optimized through the deposition conditions and use of an interlayer as well. Rectifying ratio of 55 was reached for the first prepared structures; nevertheless the technological procedures are perspective and capable of further optimization.
Trvalý link: http://hdl.handle.net/11104/0251288
Počet záznamů: 1