Thin film limit correction method to the surface defective layer in low absorption spectroscopy

0449525 - FZÚ 2016 RIV US eng J - Článek v odborném periodiku
Remeš, Zdeněk - Holovský, Jakub - Purkrt, Adam - Stuchlík, Jiří
Thin film limit correction method to the surface defective layer in low absorption spectroscopy.
Advanced Science, Engineering and Medicine. Roč. 7, č. 4 (2015), s. 343-346. ISSN 2164-6627
Grant CEP: GA ČR(CZ) GA14-05053S; GA MŠMT(CZ) LD14011
Institucionální podpora: RVO:68378271
Klíčová slova: thin films * optical properties * hydrogenated amorphous silicon * photothermal deflection spectroscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

We derive the so-called thin-film limit correction method to the surface defective layer in a low absorption spectroscopy as a novel approach to formulae for transmittance, reflectance and absorptance in highly versatile and accurate form. We draw attention to two remarkable consequences of the thin-film limit: (i) The optical properties depend on the product of the absorption coefficient, thickness and refraction index. (ii) The absorptance strongly depends on the index of refraction of the surrounding media. A new method is presented that allows direct evaluation of ultrathin surface defective layer absorptance. This presents a direct and elegant way avoiding complex evaluation of surface defective layer. Finally, we perform experimental verification on a-Si:H thin films and we show that the optical absorption of the double layer of undoped thin film layer coated with the ultrathin doped layer is higher then the sum of the optical absorption of the individual layers.
Trvalý link: http://hdl.handle.net/11104/0251075