Investigation of residual stress in structured diamond films grown on silicon

0449460 - FZÚ 2016 RIV CH eng J - Článek v odborném periodiku
Jirásek, Vít - Ižák, Tibor - Varga, Marián - Babchenko, Oleg - Kromka, Alexander
Investigation of residual stress in structured diamond films grown on silicon.
Thin Solid Films. Roč. 589, Aug (2015), 857-863. ISSN 0040-6090. E-ISSN 1879-2731
Grant CEP: GA ČR(CZ) GP14-16549P
Institucionální podpora: RVO:68378271
Klíčová slova: CVD diamond * thermal stress * selective area deposition * FEM simulations
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.761, rok: 2015

Thin diamond strips on Si with the thickness of approx. 0.5 and 1 μm and two different widths (100 and 200 μm) were fabricated in two different ways: i) selective ion etching of the continuous diamond films and ii) selective area diamond growth. The stress induced in the films was measured by Raman spectroscopy. The measured values were in the range from -0.7 to -0.1 GPa. It was found that the stress was compressive and independent of the film thickness. In the films deposited at 950 K, more compressive stress than at 1100 K was measured. The thermal part of the stress as a consequence of heterostructure cooling from high deposition temperature down to room temperature was calculated by Finite Element Method (FEM) simulations and compared with the measurement.
Trvalý link: http://hdl.handle.net/11104/0251001