Origin of slow low-temperature luminescence in undoped and Ce-doped Y.sub.2./sub.SiO.sub.5./sub. and Lu.sub.2./sub.SiO.sub.5./sub. single crystals

0449045 - FZÚ 2016 RIV DE eng J - Článek v odborném periodiku
Jarý, Vítězslav - Krasnikov, A. - Nikl, Martin - Zazubovich, S.
Origin of slow low-temperature luminescence in undoped and Ce-doped Y₂SiO₅ and Lu₂SiO₅ single crystals.
Physica Status Solidi B. Roč. 252, č. 2 (2015), s. 274-281. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA ČR GAP204/12/0805
Institucionální podpora: RVO:68378271
Klíčová slova: decay kinetics * luminescence * Lu₂SiO₅ * time-resolved spectra * Y₂SiO₅
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.522, rok: 2015

At 4.2–300 K, the steady-state and time-resolved emission and excitation spectra as well as the luminescence decay kinetics in the 10 ms–10 us time range are studied for the undoped and Ce3+-doped single crystals of Y2SiO5 and Lu2SiO5. At low temperatures, a broad intrinsic emission band located at 2.55 eV in Y2SiO5 and 2.58 eV in Lu2SiO5 is observed in the luminescence spectra of all the crystals studied under excitation in the charge-transfer absorption region (with Eexc > 4.2 eV). This emission reveals the slow non-exponential decay kinetics characteristic for tunneling recombination processes. In the slow decay kinetics of the low-temperature luminescence of Ce3+-doped crystals, both the multi-exponential and the non exponential decay stages are detected. The origin of the defects, responsible for the undesirable slow low-temperature luminescence of the undoped and Ce3+-doped Y2SiO5 and Lu2SiO5 crystals is considered.
Trvalý link: http://hdl.handle.net/11104/0250632