Defect studies of thin ZnO films prepared by pulsed laser deposition

0441457 - FZÚ 2015 RIV GB eng C - Konferenční příspěvek (zahraniční konf.)
Vlček, M. - Čížek, J. - Procházka, I. - Novotný, Michal - Bulíř, Jiří - Lančok, Ján - Anwand, W. - Brauer, G. - Mosnier, J.-P.
Defect studies of thin ZnO films prepared by pulsed laser deposition.
Journal of Physics: Conference Series. Vol. 505. Bristol: IOP Publishing Ltd, 2014 - (Hugenschmidt, C.; Piochacz, C.), "012021-1"-"012021-4". ISSN 1742-6588.
[International workshop on slow positron beam techniques and applications /13./ (SLOPOS13). München (DE), 15.09.2013-20.09.2013]
Grant CEP: GA ČR(CZ) GAP108/11/0958
Institucionální podpora: RVO:68378271
Klíčová slova: ZnO films * nanocrystalline diamond * slow positron implantation spectroscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.
Trvalý link: http://hdl.handle.net/11104/0244447