Static and dynamic VHF-deposition of microcrystalline silicon at 140 MHz with rates up to 2.5 nm/s

0440680 - FZÚ 2016 RIV DE eng C - Konferenční příspěvek (zahraniční konf.)
Strobel, C. - Leszczynska, B. - Leszczynski, S. - Merkel, U. - Kuske, J. - Fischer, D.D. - Albert, M. - Holovský, Jakub - Bartha, J.W.
Static and dynamic VHF-deposition of microcrystalline silicon at 140 MHz with rates up to 2.5 nm/s.
Proceedings of the 29th European Photovoltaic Energy Conference and Exhibition. Berlin: WIP, 2014, s. 1917-1920. ISBN 3-936338-34-5.
[European Photovoltaic Energy Conference and Exhibition /29./. Amsterdam (NL), 22.09.2014-26.09.2014]
GRANT EU: European Commission(XE) 283501 - Fast Track
Institucionální podpora: RVO:68378271
Klíčová slova: PECVD * microcrystalline silicon * solar cell * high rate * very high frequency
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
http://www.eupvsec-proceedings.com/proceedings?fulltext=holovsky&paper=28281

Microcrystalline silicon thin-film solar cells were deposited by VHF-PECVD at 140 MHz with absorber layer deposition rates up to 2.5 nm/s by a combination of very high plasma excitation frequencies (140 MHz) and high power high pressure deposition. The homogeneity of the deposition is ensured by the linear plasma source concept combined with a dynamic deposition process (moving substrates). High efficiencies of 9.3 % (9.6 % with AR coating) have been achieved at a deposition rate of 0.8 nm/s. At higher deposition rates (2.5 nm/s) the efficiency drops to 8.3 % (8.6 % with AR coating) although the absorber layer defect density is equal to the low rate material as was measured by PDS/FTPS. On the other hand the high rate material exhibits a pronounced crack formation in the absorber layer as was observed in SEM cross section images. This study investigates in how far the effect of cracks can be mitigated by different approaches, e.g. using µc-SiOx doped layers.
Trvalý link: http://hdl.handle.net/11104/0243779