Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory

0440096 - FZÚ 2015 RIV US eng J - Článek v odborném periodiku
Supplie, O. - Brückner, S. - Romanyuk, Olexandr - Döscher, H. - Höhn, C. - May, M.M. - Kleinschmidt, P. - Grosse, F. - Hannappel, T.
Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory.
Physical Review. B. Roč. 90, č. 23 (2014), "235301-1"-"235301-7". ISSN 1098-0121
Grant ostatní: AVČR(CZ) M100101201
Institucionální podpora: RVO:68378271
Klíčová slova: solar cells * GaP on Si(001) heteroepitaxy * RAS * DFT
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.736, rok: 2014

Energetically and kinetically driven Si(100) step formations result in majority domains of monohydride-terminated Si dimers oriented either parallel or perpendicular to the step edges. Here, the intentional variation of the Si(100) surface reconstruction controls the sublattice orientation of the heteroepitaxial GaP film, as observed by in situ reflection anisotropy spectroscopy (RAS) in chemical vapor ambient. Ab initio density functional calculations of both abrupt and compensated interfaces are carried out. The energetically most favorable interface is compensated with an intermixed interfacial layer. In situ RAS reveals that the GaP sublattice orientation depends on the P chemical potential during nucleation, which agrees with a kinetically limited formation of abrupt interfaces.
Trvalý link: http://hdl.handle.net/11104/0243233