Preparation of Thin Layers of Ferromagnetic Semiconductors

0439673 - ÚCHP 2015 CZ eng H - Konferenční sborník (tuzemská konf.)
Koštejn, Martin
Preparation of Thin Layers of Ferromagnetic Semiconductors.
Praha: Česká technika - nakladatelství ČVUT, 2013. 7 s. ISBN 978-80-01-05344-7.
[studentská vědecká konference fyziky pevných látek /3./. Dvorská bouda (CZ), 28.06.2013-02.07.213]
Institucionální podpora: RVO:67985858
Klíčová slova: room temperature ferromagnetism * pulsed laser deposition * diluted magnetic semiconductors
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie

The paper reports on the experiments of preparation Mn diluted in Silicon. These materials are potential ferromagnetic semiconductors. Thin layer have been prepared by reactive pulsed laser deposition of Mn target under small pressure of volatile precursor (silane or germane). We estimate initial temperature 1 mn above surface as 1.9 eV. The prepared layers can contain 1-40% of Mn atoms in form of amorphous mixture of Mn and Si or nano-crystallized mixture of Mn and Ge. High temperature annealing or rapid laser annealing is needed for recrystallization of Mn:Si layers.
Trvalý link: http://hdl.handle.net/11104/0242877