Type-I InAs quantum dots covered by GaAsSb strain reducing layer

0439648 - FZÚ 2015 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Pokorný, M. - Kozák, M. - Trojánek, F. - Pangrác, Jiří - Hospodková, Alice
Type-I InAs quantum dots covered by GaAsSb strain reducing layer.
Nanophotonic Materials XI. Bellingham: SPIE, 2014 - (Cabrini, S.; Lerondel, G.; Schwartzberg, A.; Mokari, T.), s. 916113. Proceedings of SPIE, 9161. ISBN 978-1-62841-188-1. ISSN 0277-786X.
[Conference on Nanophotonic Materials XI. San Diego, CA (US), 20.08.2014-21.08.2014]
Institucionální podpora: RVO:68378271
Klíčová slova: indium arsenide * quantum dots * gallium arsenide * luminescence * near infrared * telecommunications * upconversion
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

This work is focused on examining ultrafast photoluminescent properties of InAs QDs grown on GaAs substrate and covered by GaAs1-xSbx SRL. The aim is to understand the processes occurring inside the QDs and wetting layer and how the SRL influences the energy levels inside the QDs. Using upconversion method we measured luminescence dynamics of two samples with different concentration of Sb in the SRL with sub-picosecond time resolution. We investigated the effect of temperature, as well as the intensity and wavelength of the excitation pulse. We consequently derived recombination and relaxation processes occurring inside InAs QDs and also proved that the transport of charge carriers from the substrate and from the WL into the QDs is efficient.
Trvalý link: http://hdl.handle.net/11104/0242871