Si-related color centers in nanocrystalline diamond thin films

0439267 - FZÚ 2015 RIV DE eng J - Článek v odborném periodiku
Potocký, Štěpán - Holovský, Jakub - Remeš, Zdeněk - Müller, Martin - Kočka, Jan - Kromka, Alexander
Si-related color centers in nanocrystalline diamond thin films.
Physica Status Solidi B. Roč. 251, č. 12 (2014), s. 2603-2606. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA TA ČR TA01011740; GA ČR(CZ) GA14-04790S; GA MŠMT LH12186
Institucionální podpora: RVO:68378271
Klíčová slova: chemical vapor deposition * color center * diamond * photoluminescence * plasma
Kód oboru RIV: BL - Fyzika plazmatu a výboje v plynech
Impakt faktor: 1.469, rok: 2014

The successful growth of nanocrystalline diamond (NCD) thin films with optically active Si-related color centers was realized on glass and molybdenum substrates by the microwave plasma chemical vapor deposition (CVD) with focused or linear antenna plasma reactors. Diamond coatings were characterized by Raman spectroscopy, scanning electron microscopy, and photoluminescence (PL) spectroscopy. Increased of a-Si interlayer thickness resulted in reduction of stress in NCD film and increased renucleation ofNCD films. The PL spectra showed that the Si-color center is only observed in the focused plasma system. The influence of the substrate material as well as the a-Si interlayer on the density of Si-related color center was not confirmed in our setup.
Trvalý link: http://hdl.handle.net/11104/0242566