High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor

0437407 - ÚFE 2015 RIV DE eng C - Konferenční příspěvek (zahraniční konf.)
Yatskiv, Roman - Grym, Jan - Žďánský, Karel - Piksová, K.
High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor.
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM 2011). Berlin: IEEE, 2011, s. 68-71. ISBN 978-1-4577-1753-6. ISSN 1092-8669.
[2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM 2011). Berlin (DE), 22.05.2011-26.05.2011]
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: High sensitivity * Electrophoretic deposition techniques * Hydrogen sensor
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Hydrogen sensing characteristics of graphite-Pd(Pt)lInP Schottky diodes fabricated by electrophoretic deposition technique were investigated. The proposed hydrogen sensors showed relatively high sensitivity response of 10 6 to 1000 ppm H 2 in N 2. The barrier height reduction due to hydrogen exposure was 0.35 eV and 0.37 eV for Pd and Pt based Schottky diodes respectively. Temperature dependence of the sensitivity, the barrier height variation, the ideality factor and the barrier height itself were studied. Pt based Schottky diodes show better sensitivity and shorter recovery times compared to Pd ones
Trvalý link: http://hdl.handle.net/11104/0241025